Перегляд за автором "Rogozin, I.V."

Результати 1-3 з 3

Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy

Rogozin, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)

Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen ...
Photoluminescence and electrophysical properties of p-type ZnO layers implanted with V Group elements

Kotlyarevsky, M.B.; Rogozin, I.V.; Marakhovsky, O.V. (Functional Materials, 2005)

Ion implantation of arsenic and nitrogen into zinc oxide film (As and N being acceptor impurities in ZnO) has been shown to result in formation of the hole conductivity only if the film is annealed in the presence ...
Photovoltaic effect at spin resonance in quantum magnetic field

Chernyshov, N.N.; Belousov, A.V.; Alkhawaldeh, M.A.F.; Pisarenko, V.M.; Rogozin, I.V. (Радіофізика та електроніка, 2018)

The article is devoted to the investigation of the photovoltaic effect in n-InSb under optical transitions between the spin subbands of the Landau levels for the ultraquantum limit. The geometry is considered when the ...

Результати 1-3 з 3

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